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FGH60N6S2
August 2003
FGH60N6S2
600V, SMPS II Series N-Channel IGBT
General Description
The FGH60N6S2 is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: * * * * * * Power Factor Correction (PFC) circuits Full bridge topologies Half bridge topologies Push-Pull circuits Uninterruptible power supplies Zero voltage and zero current switching circuits
Features
* 100kHz Operation at 390V, 52A * 200kHZ Operation at 390V, 31A * 600V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . 77ns at TJ = 125oC * Low Gate Charge . . . . . . . . 140nC at VGE = 15V * Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical * UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 700mJ * Low Conduction Loss
Formerly Developmental Type TA49346.
Package
TO-247
Symbol
E C G
C
G
COLLECTOR (Back-Metal)
E
Device Maximum Ratings TC= 25C unless otherwise noted
Symbol BVCES IC25 IC110 ICM VGES VGEM SSOA EAS PD TJ TSTG Parameter Collector to Emitter Breakdown Voltage Collector Current Continuous, TC = 25C Collector Current Continuous, TC = 110C Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 150C, Figure 2 Pulsed Avalanche Energy, ICE = 20A, L = 1.3mH, VDD = 50V Power Dissipation Total TC = 25C Power Dissipation Derating TC > 25C Operating Junction Temperature Range Storage Junction Temperature Range Ratings 600 75 75 320 20 30 200A at 600V 700 625 5 -55 to 150 -55 to 150 mJ W W/C C C Units V A A A V V
CAUTION: Stresses above those listed in "Device Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. Pulse width limited by maximum junction temperature.
(c)2003 Fairchild Semiconductor Corporation FGH60N6S2 Rev. A2
FGH60N6S2
Package Marking and Ordering Information
Device Marking 60N6S2 Device FGH60N6S2 Package TO-247 Reel Size Tube Tape Width N/A Quantity 30
Electrical Characteristics TJ = 25C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off State Characteristics
BVCES BVECS ICES IGES Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current Gate to Emitter Leakage Current IC = 250A, VGE = 0 IC = -10mA, VGE = 0 VCE = 600V VGE = 20V TJ = 25C TJ = 125C 600 20 250 3 250 V V A mA nA
On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage IC = 40A, VGE = 15V TJ = 25C TJ = 125C 1.9 1.65 2.5 2.2 V V
Dynamic Characteristics
QG(ON) VGE(TH) VGEP Gate Charge Gate to Emitter Threshold Voltage Gate to Emitter Plateau Voltage IC = 40A, VCE = 300V VGE = 15V VGE = 20V 3.5 140 180 4.3 6.5 175 225 5.0 8.0 nC nC V V
IC = 250A, VCE = VGE IC = 40A, VCE = 300V
Switching Characteristics
SSOA td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF Switching SOA Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 2) Turn-On Energy (Note 2) Turn-Off Energy (Note 3) Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 2) Turn-On Energy (Note 2) Turn-Off Energy (Note 3) IGBT and Diode at TJ = 125C ICE = 40A, VCE = 390V, VGE = 15V, RG = 3 L = 100H Test Circuit - Figure 20 TJ = 150C, RG = 3, VGE = 15V, L = 100H, VCE = 600V IGBT and Diode at TJ = 25C, ICE = 40A, VCE = 390V, VGE = 15V, RG = 3 L = 100H Test Circuit - Figure 20 200 18 15 70 50 400 490 310 27 32 110 77 400 750 688 450 150 90 450 850 950 A ns ns ns ns J J J ns ns ns ns J J J
Thermal Characteristics
RJC
NOTE: 2. Values
Thermal Resistance Junction-Case
TO-247
-
-
0.2
C/W
for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in figure 20.
3. Turn-Off
Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
(c)2003 Fairchild Semiconductor Corporation
FGH60N6S2 Rev. A2
FGH60N6S2
Typical Performance Curves TJ = 25C unless otherwise noted
175 150 125 100 PACKAGE LIMITED 75 50 25 0 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC) ICE, COLLECTOR TO EMITTER CURRENT (A) TJ = 150oC 225 200 175 150 125 100 75 50 25 0 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE (V) TJ = 150oC, RG = 3 VGE = 15V, L = 100H ,
ICE , DC COLLECTOR CURRENT (A)
Figure 1. DC Collector Current vs Case Temperature
1000 TJ = 125oC, RG = 3 L = 100H, V CE = 390V , fMAX, OPERATING FREQUENCY (kHz) TC = 75oC 500
Figure 2. Minimum Switching Safe Operating Area
16 tSC , SHORT CIRCUIT WITHSTAND TIME (s) VCE = 390V, RG = 3, TJ = 125oC 14 12 ISC 10 8 6 tSC 4 2 0 30 50 100 9 10 11 12 13 14 15 16 VGE , GATE TO EMITTER VOLTAGE (V)
1100 1000 900 800 700 600 500 400 300 ISC, PEAK SHORT CIRCUIT CURRENT (A) 2.2
VGE = 15V 100 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) 50 30 5 10 ICE, COLLECTOR TO EMITTER CURRENT (A) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) ROJC = 0.2oC/W, SEE NOTES VGE = 10V
Figure 3. Operating Frequency vs Collector to Emitter Current
80 ICE, COLLECTOR TO EMITTER CURRENT (A) 70 60 50 40 30 20 TJ = 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 VCE, COLLECTOR TO EMITTER VOLTAGE (V) TJ = 125oC DUTY CYCLE < 0.5%, VGE = 10V PULSE DURATION = 250s
Figure 4. Short Circuit Withstand Time
80 ICE, COLLECTOR TO EMITTER CURRENT (A) 70 60 50 40 TJ = 125oC 30 20 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) TJ = 150oC TJ = 25oC DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250s
150oC
TJ = 25oC
Figure 5. Collector to Emitter On-State Voltage
Figure 6. Collector to Emitter On-State Voltage
(c)2003 Fairchild Semiconductor Corporation
FGH60N6S2 Rev. A2
FGH60N6S2
Typical Performance Curves TJ = 25C unless otherwise noted
4.0 RG = 3, L = 100H, VCE = 390V EOFF TURN-OFF ENERGY LOSS (mJ) EON2 , TURN-ON ENERGY LOSS (mJ) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 TJ = 25oC, TJ = 125oC, VGE = 15V 0 0 10 20 30 40 50 60 70 80 0.0 0 10 20 30 TJ = 25oC, TJ = 125oC, VGE = 10V 1.75 1.50 1.25 1.00 TJ = 125oC, VGE = 10V, VGE = 15V 0.75 0.50 0.25 TJ = 25oC, VGE = 10V, VGE = 15V 40 50 60 70 80 2.00 RG = 3, L = 100H, VCE = 390V
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 7. Turn-On Energy Loss vs Collector to Emitter Current
32 30 td(ON)I, TURN-ON DELAY TIME (ns) 28 RG = 3, L = 100H, VCE = 390V
Figure 8. Turn-Off Energy Loss vs Collector to Emitter Current
90 RG = 3, L = 100H, VCE = 390V 80 70 trI , RISE TIME (ns)
26 24 22 20 18 16 14 12 0 10 20 30 40 50 60 70 80 ICE , COLLECTOR TO EMITTER CURRENT (A) TJ = 25oC, TJ = 125oC, VGE = 15V TJ = 25oC, TJ = 125oC, VGE = 10V
60 50 TJ = 25oC, TJ = 125oC, VGE = 10V 40 30 20 10 0 0 10 20 30 40 50 60 70 80 ICE , COLLECTOR TO EMITTER CURRENT (A) TJ = 25oC, TJ = 125oC, VGE = 15V
Figure 9. Turn-On Delay Time vs Collector to Emitter Current
120
Figure 10. Turn-On Rise Time vs Collector to Emitter Current
90 RG = 3, L = 100H, VCE = 390V 80
RG = 3, L = 100H, VCE = 390V
td(OFF)I , TURN-OFF DELAY TIME (ns)
100 70 80 VGE = 10V, VGE = 15V, TJ = 125oC tfI , FALL TIME (ns) 60 50 40 30 20 20 TJ = 25oC, TJ = 125oC, VGE = 10V
60 VGE = 10V, VGE = 15V, TJ = 40 25oC
TJ = 25oC, TJ = 125oC, VGE = 15V
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
80
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 11. Turn-Off Delay Time vs Collector to Emitter Current
Figure 12. Fall Time vs Collector to Emitter Current
(c)2003 Fairchild Semiconductor Corporation
FGH60N6S2 Rev. A2
FGH60N6S2
Typical Performance Curves TJ = 25C unless otherwise noted
200 ICE, COLLECTOR TO EMITTER CURRENT (A) VGE, GATE TO EMITTER VOLTAGE (V) 175 150 125 100 TJ = 25oC 75 50 TJ = 125oC 25 TJ = -55oC 0 3.0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 20 VGE, GATE TO EMITTER VOLTAGE (V) 40 60 80 100 QG , GATE CHARGE (nC) 120 140 DUTY CYCLE < 0.5%, VCE = 10V PULSE DURATION = 250s 16 IG(REF) = 1mA, RL = 7.5 14 12 10 8 6 4 2 VCE = 200V
VCE = 600V
VCE = 400V
Figure 13. Transfer Characteristic
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) RG = 3, L = 100H, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF 4 ICE = 80A 3 ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) 5 100
Figure 14. Gate Charge
TJ = 125oC, L = 100H, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF
10
ICE = 80A 1 ICE = 40A ICE = 20A
2 ICE = 40A 1 ICE = 20A 0 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC)
0.1 1 10 100 1000 RG, GATE RESISTANCE ()
Figure 15. Total Switching Loss vs Case Temperature
10 CIES C, CAPACITANCE (nF) VCE, COLLECTOR TO EMITTER VOLTAGE (V) FREQUENCY = 1MHz
Figure 16. Total Switching Loss vs Gate Resistance
2.8 DUTY CYCLE < 0.5% PULSE DURATION = 250s 2.6
1
2.4
COES 0.1
2.2
ICE = 60A
2.0 ICE = 40A 1.8 ICE = 20A 1.6 6 7 8 9 10 11 12 13 14 15 16
CRES 0.01 0 20 40 60 80 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 100
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 17. Capacitance vs Collector to Emitter Voltage
Figure 18. Collector to Emitter On-State Voltage vs Gate to Emitter Voltage
(c)2003 Fairchild Semiconductor Corporation
FGH60N6S2 Rev. A2
FGH60N6S2
Typical Performance Curves TJ = 25C unless otherwise noted
ZqJC , NORMALIZED THERMAL RESPONSE
100 0.50
0.20 0.10 10-1 0.05 0.02 0.01 SINGLE PULSE 10-2 10-5 10-4 10-3 10-2 10-1 PD
t1
t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZqJC X RqJC) + TC
100
101
t1 , RECTANGULAR PULSE DURATION (s)
Figure 19. IGBT Normalized Transient Thermal Impedance, Junction to Case
Test Circuit and Waveforms
FGH60N6S2D DIODE TA49393 90% VGE L = 100H VCE RG = 3 + 90% ICE VDD = 390V 10% td(OFF)I tfI trI td(ON)I EOFF 10% EON2
FGH60N6S2
-
Figure 20. Inductive Switching Test Circuit
Figure 21. Switching Test Waveforms
(c)2003 Fairchild Semiconductor Corporation
FGH60N6S2 Rev. A2
FGH60N6S2
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gatevoltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 27. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/ 2. EON2 and EOFF are defined in the switching waveforms shown in Figure 27. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0)
(c)2003 Fairchild Semiconductor Corporation
FGH60N6S2 Rev. A2
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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I5

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